Atomically flat silicon surface and silicon/insulator interface formation technologies for (100) surface orientation large-diameter wafers introducing high performance and low-noise metal-insulator-silicon FETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 291-298

  Kuroda, Rihito ^a   Suwa, Tomoyuki ^a   Teramoto, Akinobu ^a   Hasebe, Rui ^b   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Stella Chemifa Co Ltd   (Japan)

Author keywords

Atomic force microscopy (AFM); CMOSFETs; Semiconductor device noise; Semiconductor insulator interfaces; Silicon; Surface treatment

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY; INERT GASES; LANDFORMS; METAL INSULATOR BOUNDARIES; MOSFET DEVICES; NONMETALS; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON ON INSULATOR TECHNOLOGY; SOIL CONSERVATION; SURFACE MORPHOLOGY; SURFACE TREATMENT; TECHNOLOGY;

ATOMIC FORCE MICROSCOPY (AFM); CMOSFETS; SEMICONDUCTOR DEVICE NOISE; SEMICONDUCTOR-INSULATOR INTERFACES; SILICON;

SILICON WAFERS;

EID: 59849101339     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010591     Document Type: Article

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