Initial stage of ultra-thin SiO 2 formation at low temperatures using activated oxygen

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 123-126

  Fuyuki, Takashi ^a   Muranaka, Seishi ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Activated oxygen; Low temperature oxidation; Remote plasma; SiO 2 Si interface; Ultra thin SiO 2

Indexed keywords

ACTIVATION ENERGY; FILM GROWTH; INTERFACES (MATERIALS); OXYGEN; PLASMAS; REACTION KINETICS; SILICA; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ACTIVATED OXYGEN; PARABOLIC LAW;

ULTRATHIN FILMS;

EID: 0031548129     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80064-5     Document Type: Article

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