Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2467-2469

  Nakajima, Kaoru ^a   Suzuki, Motofumi ^a   Kimura, Kenji ^a   Yamamoto, Masashi ^b   Teramoto, Akinobu ^b   Ohmi, Tadahiro ^b   Hattori, Takeo ^b,c  

^a KYOTO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Channeling; High resolution RBS; Interface; Lattice distortion; Silicon; SiO2

Indexed keywords

INTERFACES (MATERIALS); OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; VISCOUS FLOW;

CHANNELING; HIGH-RESOLUTION RBS; LATTICE DISTORTION;

SILICA;

EID: 33645671983     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2467     Document Type: Article

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