Measurement of anisotropy in the thermal conductivity of Ge 2Sb2Te5 films

Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009

Volumn , Issue , 2009, Pages 52-57

  Lee, Jaeho ^a   Reifenberg, John P ^a   Li, Zijian ^a   Hom, Lewis ^a   Asheghi, Mehdi ^a   Kim, Sangbum ^b   Wong, H S Philip ^b   Goodson, Kenneth E ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

3 omega (3 ) method; Anisotropy; GeSbTe (GST); Lateral phase change memory (PCM); Phase change material; Thermal characterization; Thermal conductivity

Indexed keywords

ANISOTROPY RATIO; ANNEALING TEMPERATURES; ELECTRO-THERMAL SIMULATION; FACE-CENTERED CUBIC; HEAT DIFFUSION EQUATIONS; HEXAGONAL CLOSE PACKED; IN-PLANE; LATERAL PHASE CHANGE MEMORY (PCM); LATERAL SPREADING; LATERAL STRUCTURES; OUT-OF-PLANE; POTENTIAL IMPACTS; THERMAL CHARACTERIZATION;

AMORPHOUS FILMS; ANISOTROPY; ANTIMONY ALLOYS; CARBON FIBER REINFORCED PLASTICS; GERMANIUM; PULSE CODE MODULATION; SINGLE CRYSTALS; TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY; THERMOANALYSIS;

PHASE CHANGE MEMORY;

EID: 77951699335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2009.5429777     Document Type: Conference Paper

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