Anisotropic Thermal Conductivity of Ge Quantum-Dot and Symmetrically Strained Si/Ge Superlattices

Journal of Nanoscience and Nanotechnology

Volumn 1, Issue 1, 2001, Pages 39-42

  Liu, W L ^a   Borca Tasciuc, T ^a   Chen, G ^a   Liu, J L ^b   Wang, K L ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

Anistropy; Ge quantum dot; Si Ge superlattices; Thermal conductivity

Indexed keywords

GERMANIUM; SILICON;

ANISOTROPY; ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; COMPARATIVE STUDY; COMPUTER SIMULATION; CRYSTALLIZATION; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; TEMPERATURE; THERMAL CONDUCTIVITY; VALIDATION STUDY;

ANISOTROPY; COMPUTER SIMULATION; CRYSTALLIZATION; GERMANIUM; MATERIALS TESTING; MODELS, MOLECULAR; NANOTECHNOLOGY; SEMICONDUCTORS; SILICON; STRESS, MECHANICAL; TEMPERATURE; THERMAL CONDUCTIVITY;

EID: 0001924789     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2001.013     Document Type: Article

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