Phase transformation behaviors of Si O2 doped Ge2 Sb2 Te5 films for application in phase change random access memory

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Ryu, Seung Wook ^a   Oh, Jin Ho ^a   Lee, Jong Ho ^a   Choi, Byung Joon ^a   Kim, Won ^b   Hong, Suk Kyoung ^b   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^b  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION; ELECTRIC POWER UTILIZATION; GERMANIUM COMPOUNDS; PHASE TRANSITIONS; SILICA;

COSPUTTERING; METASTABLE AMORPHOUS PHASE; PHASE CHANGE RANDOM ACCESS MEMORY APPLICATIONS;

THIN FILMS;

EID: 42149162916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2898719     Document Type: Article

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