Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1552121-15521211

  Powell, M J ^a   Deane, S C ^a   Wehrspohn, R B ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

ARTICLE; CHEMICAL BOND; DENSITY; FILM; HYDROGENATION; MICROSCOPY; MOLECULAR MODEL; SEMICONDUCTOR; THERMAL ANALYSIS;

EID: 0038303551     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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49. d) in amorphous silicon forms a strong Si-H bond, together with some Si network motion, in contrast to crystalline silicon, where the tetrahedral site is commonly attributed to a weakly bound interstitial state. An alternative notation, for this site could be the antibondinglike (AB) site. However, to be in-line with previous publications, we refer to it as a tetrahedral-like site.