Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Suemori, Kouji ^a   Uemura, Sei ^a   Yoshida, Manabu ^a   Hoshino, Satoshi ^a   Takada, Noriyuki ^a   Kodzasa, Takehito ^a   Kamata, Toshihide ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; TRANSISTORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); GATE BIASES; INSULATOR SURFACES; LATTICE DISTORTIONS; ORGANIC FIELD EFFECT TRANSISTORS (OFETS); PENTACENE LAYERS; SI O2 SURFACE; THRESHOLD VOLTAGE SHIFTS; VOLTAGE STABILITY (VS);

FIELD EFFECT TRANSISTORS;

EID: 48249108007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957987     Document Type: Article

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