Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Hekmatshoar, Bahman ^a   Cherenack, Kunigunde H ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI TFT; ACTIVE-MATRIX OLED; AMORPHOUS SILICON THIN FILM TRANSISTORS; DC SATURATION CURRENTS; HIGH QUALITIES; PHOSPHORESCENT OLED;

ELECTRON DEVICES; HELMET MOUNTED DISPLAYS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 64549132891     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796621     Document Type: Conference Paper

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