Comparison of the structural properties and electrical characteristics of Pr2O3, Nd2O3 and Er 2O3 charge trapping layer memories

Semiconductor Science and Technology

Volumn 24, Issue 9, 2009, Pages

  Pan, Tung Ming ^a   Yu, Te Yi ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; CHARGE STORAGE; CONDUCTION BAND OFFSET; DEEP ELECTRON TRAPS; ELECTRICAL CHARACTERISTIC; ERBIUM OXIDE; FLAT-BAND VOLTAGE SHIFT; MEMORY DEVICE; METAL-OXIDE; MORPHOLOGICAL FEATURES; NEODYMIUM OXIDE; PRASEODYMIUM OXIDES; ROOM TEMPERATURE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHARGE TRAPPING; ELECTRON MOBILITY; ERBIUM; HETEROJUNCTIONS; NEODYMIUM; PRASEODYMIUM; SILICA; SILICATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77951600776     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/9/095022     Document Type: Article

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