Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors

Semiconductor Science and Technology

Volumn 18, Issue 7, 2003, Pages 666-669

  Levinshtein, M E ^a   Ivanov, P A ^a   Asif Khan, M ^b   Simin, G ^b   Zhang, J ^b   Hu, X ^b   Yang, J ^b  

^a IP TIRAS   (Russian Federation)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SUBSTRATES; TRANSMISSION LINE THEORY;

ALUMINUM GALLIUM NITRIDE; ELECTRON DRIFT MOBILITY; HALL MOBILITY; METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0038148997     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/7/311     Document Type: Article

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