Comprehensive noise characterization and modeling for 65-nm MOSFETs for millimeter-wave applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 4, 2010, Pages 740-746

  Wang, Sheng Chun ^a,b   Su, Pin ^a   Chen, Kun Ming ^b   Liao, Kuo Hsiang ^b   Chen, Bo Yuan ^b   Huang, Sheng Yi ^c   Hung, Cheng Chou ^c   Huang, Guo Wei ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Millimeter wave; MOSFET; Noise; RF

Indexed keywords

CHANNEL LENGTH; CHANNEL LENGTH MODULATION; CHANNEL NOISE; DOWN-SCALING; GATE RESISTANCE; HIGH-FREQUENCY NOISE; MILLIMETER WAVE FREQUENCIES; MILLIMETER-WAVE APPLICATIONS; MILLIMETER-WAVE BAND; MOSFET; MOSFET NOISE; MOSFETS; NOISE CHARACTERIZATION; NOISE SOURCE; SUBSTRATE RESISTANCE;

IMPACT RESISTANCE; MILLIMETER WAVE DEVICES; MOSFET DEVICES;

MILLIMETER WAVES;

EID: 77951206442     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2041582     Document Type: Article

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