A practical method to extract extrinsic parameters for the silicon MOSFET small-signal model

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 151-154

  Wang, S C ^a   Huang, G W ^a   Chen, K M ^a   Peng, A S ^a   Tseng, H C ^b   Hsu, T L ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

MOSFET; Parameter extraction; Small signal modeling; Substrate

Indexed keywords

CAPACITANCE; INDUCTANCE; INTEGRATED CIRCUITS; LOGIC DESIGN; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SEMICONDUCTOR JUNCTIONS; SILICON;

PARAMETER EXTRACTION; SMALL-SIGNAL MODELING; VOLTAGE DROP;

MOSFET DEVICES;

EID: 6344233582     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Lee et al., "A novel approach to extracting small-signal model parameters of silicon MOSFET's," IEEE Microwave Guided Wave Lett., Vol. 7, pp. 75-77, 1997.
2. D. Lovelace et al., "Extracting small-signal model parameters of silicon MOSFET transistors," in IEEE MTT-S Tech. Dig., pp. 865-868, 1994.
3. C. H. Kim et al., "Unique extraction of substrate parameters of common-source MOSFETs," IEEE Microwave Guided Wave Lett., vol. 9, pp. 108-110, Mar. 1999.
4. J. -P. Raskin et al., "Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling," IEEE Trans. Electron Devices, vol. 45, pp. 1017-1025, 1998.
5. S. Lee et al., "A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs," IEEE Trans. Electron Devices, vol. 48, pp. 1374-1379, 2001.