Small signal and noise equivalent circuit for CMOS 65 nm up to 110 GHz

Proceedings of the 38th European Microwave Conference, EuMC 2008

Volumn , Issue , 2008, Pages 321-324

  Waldhoff, N ^a   Andrei, C ^a   Gloria, D ^b   Danneville, F ^a   Dambrine, G ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; INTEGRATED CIRCUITS; MOSFET DEVICES;

DE-EMBEDDING; MEASUREMENT PROCEDURES; MODEL SIMULATIONS; MOS FETS; MOSFET MODELS; NOISE MEASUREMENTS; NOISE MODELLING; S PARAMETERS; SIMULATION RESULTS; SMALL SIGNALS; VECTOR NETWORKS;

MICROWAVES;

EID: 62349121822     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2008.4751453     Document Type: Conference Paper

References (15)

1. V. Dimitrov, J.B. Heng, K. Timp, O. Dimauro, R. Chan, J. Feng, W. Hafez, T. Sorsch, W. Mansfield, J. Miner, A. Kornblit, F. Klemens, J. Bower, R. Cirelli, E. Taylor, M. Feng, G. Timp "High performance sub-50nm MOSFETs for mixed signal applications" in IEDM Tech Digest 2006, pp. 213-216J. Breckling, Ed., The Analysis of Directional Time Series: Applications to Wind Speed and Direction, ser. Lecture Notes in Statistics. Berlin, Germany: Springer, 1989, vol. 61.
2. F. Schwierz, C. Schippel, "Performance trends of Si-based RF transistors" Solid State Electron. vol. 47, no. 2-3, pp. 384-390, February-March 2007.
3. A. R. Barnes, A. Boetti, L. Marchand, J. Hopkins, "An overview of microwave component requirements for future space applications" Gallium Arsenide and other Semiconductor Application Symposium 2005, pp. 5-12.
4. Lee, S.; Jagannathan, B.; Narasimha, S.; Chou, A.; Zamdmer, N.; Johnson, J.; Williams, R.; Wagner, L.; Kim, J.; Plouchart, J.; Pekarik, J.; Springer, S.; Freeman, G.; "Record RF performance of 45-nm SOI CMOS Technology", IEEE Int., Electron Devices Meeting, Page(s):255-258, Dec. 2007.
5. L. F. Tiemeijer, R. J. Havens, A. B. M. Jansman, and Y. Bouttement, "Comparison of the 'pad-open-short' and 'open-short-load' deembedding techniques for accurate on-wafer RF characterization of highquality passives," IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 723-729, Feb. 2005.
6. H. Cho and D. E. Burk, "A three-step method for the de-embedding of high-frequency S-parameter measurements," IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1371-1371, Jun. 1991.
7. Carbonero, J.L.; Joly, R.; Morin, G.; Cabon, B., "On-wafer highfrequency measurement improvements", IEEE Int. Conference on Microelectronic Test Structures, Vol7, March 1994.
8. A. Boudiaf and M. Laporte, "An accurate and repeatable technique for noise parameter measurements," IEEE Trans. Instrum. Meas., vol. 42, pp. 532-537, Apr. 1993. (tuner method).
9. G. Dambrine, H. Happy, F. Danneville, and A. Cappy, "A new method for on wafer noise measurement," IEEE Trans. Microwave Theory Technol., vol. 41, pp. 375-381, Mar. 1993.
10. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
11. J. P. Raskin, G. Dambrine, and R. Gillon, "Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET's," IEEE Microwave Guided Wave Lett., vol. 7, Dec. 1997.
12. R. Torres-Torres, R. Murphy-Arteaga, and J. A. Reynoso-Hernandez, "Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1335-1342, Jul. 2005.
13. J.-C. Guo and Y.-M. Lin, "A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling," IEEE Trans. Electron Devices, vol. 53, pp. 339-347, Feb. 2006.
14. L.F. Tiemeijer, R.J. Havens, R. de Kort, A. J. Scholten, "Improved Y- factor method for wide-band on-wafer noise-parameter measurements", IEEE Trans. on Microwave Theory and Tech. Vol. 53, Issue 9, pp. 2917-2925, Sept. 2005.
15. G. Dambrine, J. P. Raskin, F. Danneville, D. Vanhoenacker-Janvier, J. P. Colinge, and A. Cappy, "High-Frequency Four Noise Parameters of Silicon-on-Insulator-Based Technology MOSFET for the Design of Low-Noise RF Integrated Circuits", IEEE Trans. on Electron Devices, Vol. 46, no. 8, August 1999.