MMW lab in-situ to extract noise parameters of 65nm CMOS aiming 70-90GHz applications

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2009, Pages 397-400

  Tagro, Y ^a,b   Gloria, D ^a   Boret, S ^a   Dambrine, G ^b  

^a STMICROELECTRONICS   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Active devices; Cold FET; Impedance tuner; In situ lab; MOSFET; Multi impedance; Noise microwave measurement; Transistors; Transmission lines; Varactor

Indexed keywords

ACTIVE DEVICES; COLD FET; IMPEDANCE TUNER; IN SITU LAB; MOSFET; MULTI-IMPEDANCE; NOISE MICROWAVE MEASUREMENT; TRANSMISSION LINES;

BANDPASS FILTERS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC LINES; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; MESFET DEVICES; MICROELECTROMECHANICAL DEVICES; MICROWAVE MEASUREMENT; MICROWAVES; RADIO; RADIO WAVES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION LINE THEORY; TUNERS; VARACTORS;

MOSFET DEVICES;

EID: 70350225561     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2009.5135566     Document Type: Conference Paper

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