A new noise parameter model of short-channel MOSFETs

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2007, Pages 639-642

  Jeon, Jongwook ^a   Song, Ickhyun ^a   Kang, In Man ^a   Yun, Yeonam ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Shin, Hyungeheol ^a  

^a Seoul National University   (South Korea)

Author keywords

Analytical modeling; Channel thermal noise; Induced gate noise; Noise parameters; RF MOSFET

Indexed keywords

ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; THERMAL NOISE;

ANALYTICAL MODELING; CHANNEL THERMAL NOISE; INDUCED GATE NOISE; NOISE PARAMETERS;

MOSFET DEVICES;

EID: 34748836331     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380964     Document Type: Conference Paper

References (4)

1. A. Van Der Ziel, Noise in Solid State Devices and Circuits, New York: Wiley, 1986.
2. Y. Cheng, M. J. Deen, and C. H. Chen, "MOSFET modeling for RF IC design," IEEE Trans. Electron Devices, vol. 52, pp. 1286-1303, July. 2005.
3. K. Han, H. Shin, and K. Lee, "Analytical drain thermal noise current model valid for deep submicron MOSFETs," IEEE Trans. Electron Devices, vol. 51, No. 2, pp. 261-269, Feb. 2004.
4. J. Jeon, Y. Yun, Y. W. Kim, and H. Shin, "A New Analytical Model for Channel Thermal Noise of Deep-submicron RF MOSFETs," International SoC Design Conference(ISOCC), pp. 409-410, Oct. 2006.