Atomic structure of the m-plane AlN/SiC interface

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1456-1459

  Zhou, Lin ^a   Ni, X ^b,c   Özgür, Ü ^b,c   Morkoc H ^b,c   Devaty, R P ^d   Choyke, W J ^d   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Virginia Commonwealth University   (United States)

^c VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^d UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; IMAGE ANALYSIS; MODEL STRUCTURES; PHASE INTERFACES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

A1. CHARACTERIZATION; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; ALN; ALN LAYERS; ALN NUCLEATION LAYERS; ATOMIC STRUCTURES; B1. NITRIDES; CHARGE NEUTRALITIES; GAN FILMS; HEXAGONAL STRUCTURES; HIGH RESOLUTIONS; HIGH TEMPERATURES; IMAGE SIMULATIONS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MISFIT DEFECTS; SI-N BONDS; SIC SUBSTRATES; SPACE GROUPS; STACKING SEQUENCES; STRUCTURAL MODELS; STRUCTURAL STUDIES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 62549153576     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.047     Document Type: Article

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