Effect of oxygen postdeposition annealing on bias temperature instability of hafnium silicate MOSFET

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 399-401

  Jo, Minseok ^a   Park, Hokyung ^a   Lee, Joon Myoung ^a   Chang, Man ^a   Jung, Hyung Suk ^b   Lee, Jong Ho ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Bias temperature instability (BTI); Hafnium silicate; Oxygen interstitial defects

Indexed keywords

ANNEALING; OXYGEN VACANCIES; PASSIVATION; THERMAL EFFECTS; THRESHOLD VOLTAGE;

BIAS TEMPERATURE INSTABILITY; HAFNIUM SILICATE; OXYGEN INTERSTITIAL DEFECTS; POSTDEPOSITION ANNEAL;

MOSFET DEVICES;

EID: 41749113795     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.918249     Document Type: Article

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