Characteristics of InGaN channel HEMTs grown by MOCVD

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 929-931

  Ran, Junxue ^a   Wang, Xiaoliang ^a   Hu, Guoxin ^a   Luo, Weijun ^a   Ma, Zhiyong ^a   Li, Jianping ^a   Wang, Cuimei ^a   Wang, Junxi ^a   Zeng, Yiping ^a   Li, Jinmin ^a   Liu, Xinyu ^b   Liu, Jian ^b   He, Zhijing ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

GaN; HEMTs; InGaN channel

Indexed keywords

CRYSTAL GROWTH; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSCONDUCTANCE;

GATE WIDTH; SAPPHIRE SUBSTRATES; SIGNAL PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547297034     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306597     Document Type: Conference Paper

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