Ge nanocrystals embedded in a SiO2 matrix obtained from SiGeO films deposited by LPCVD

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Rodriguez A ^a   Rodriguez T ^a   Sangrador, J ^a   Morana, B ^a,b   Kling, A ^c,d   Ballesteros, C ^e  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^e UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AREAL DENSITIES; CURRENT PROCESSING; DEPOSITED FILMS; DEPOSITION TEMPERATURES; FULLY COMPATIBLE; GE ATOM; GE DIFFUSION; GE NANOCRYSTALS; LOW TEMPERATURES; MATRIX; REACTIVE GAS; SLOW GROWTH RATES;

ANNEALING; NANOCRYSTALS; OXIDES; SILICON; SILICON COMPOUNDS;

GERMANIUM;

EID: 77950947408     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045032     Document Type: Article

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