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Volumn 4, Issue 2, 2007, Pages 288-291
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Raman and TEM studies of Ge nanocrystal formation in SiO x:Ge/SiOx multilayers
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING TEMPERATURE;
ANNEALING TEMPERATURES;
CROSS SECTION TEM;
DOUBLE LAYER;
ENERGY DISPERSIVE X-RAY ANALYSIS;
GE NANOCRYSTALS;
GERMANO SILICATE;
HIGH RESOLUTIONS;
INTERNATIONAL CONFERENCES;
NANO-DEVICES;
NANOCRYSTAL FORMATION;
NITROGEN ATMOSPHERE.;
SI SUBSTRATES;
SILICON OXIDES;
SINGLE LAYERS;
TRANSMISSION ELECTRON MICROSCOPY (TEM);
ANNEALING;
ARCHITECTURAL ACOUSTICS;
ATMOSPHERIC TEMPERATURE;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ELECTRONS;
EPITAXIAL GROWTH;
GERMANIUM;
MOLECULAR BEAM EPITAXY;
MOLECULAR ORBITALS;
MOLECULAR SPECTROSCOPY;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALS;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOTECHNOLOGY;
NITROGEN;
NONMETALS;
PHOTOELECTRON SPECTROSCOPY;
PLASMA DEPOSITION;
PLASMA DIAGNOSTICS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
SILICON COMPOUNDS;
SPECTRUM ANALYSIS;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 50049107430
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200673233 Document Type: Conference Paper |
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Times cited : (7)
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References (6)
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