Formation of Ge nanocrystals using Si1.33 Ge0.67 O2 and Si2.67 Ge1.33 N2 film for nonvolatile memory application

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Chen, Wei Ren ^a   Chang, Ting Chang ^b,c   Hsieh, Yen Ting ^a   Sze, Simon M ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NONE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GERMANIUM; HYDROGEN; NONVOLATILE STORAGE; TRANSMISSION ELECTRON MICROSCOPY;

DATA RETENTION; NONVOLATILE MEMORY; PREANNEALING CAPPING OXIDE; THERMAL BUDGET;

NANOCRYSTALS;

EID: 34548473058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779931     Document Type: Article

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