The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO2

Nanotechnology

Volumn 17, Issue 18, 2006, Pages 4548-4553

  Mestanza, S N M ^a   Rodriguez, E ^a   Frateschi, N C ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICA;

FORMING GAS ATMOSPHERE; IMPLANTATION DOSE; RAMAN EMISSION; RAMAN INTENSITY;

NANOSTRUCTURED MATERIALS;

EID: 33748360099     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/18/004     Document Type: Article

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