Ge nanocrystals embedded in a Ge Ox matrix formed by thermally annealing of Ge oxide films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 731-733

  Vijayarangamuthu, K ^a   Rath, Shyama ^a   Kabiraj, D ^b   Avasthi, D K ^b   Kulriya, Pawan K ^b   Singh, V N ^a   Mehta, B R ^a  

^a UNIVERSITY OF DELHI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRON BEAM EVAPORATION; GE NANOCRYSTALS; MATRIX; OXIDE PHASIS; RAMAN MEASUREMENTS; SPHERICAL PARTICLE; TEM; THERMAL-ANNEALING; XRD;

ANNEALING; GERMANIUM; NANOCRYSTALS; OXIDE FILMS; PHASE SEPARATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING GERMANIUM;

EID: 67650327353     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3155402     Document Type: Article

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