Effect of Deposition Parameters on the Characteristics of Low-Pressure Chemical Vapor Deposited SiGe Films Grown from Si2H6 and GeH4

Journal of the Electrochemical Society

Volumn 148, Issue 10, 2001, Pages

  Olivares, J ^a   Sangrador, J ^a   Rodriguez A ^a   Rodriguez T ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037577568     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1399277     Document Type: Article

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