Charge retention and optical properties of Ge nanocrystals embedded in GeO2 matrix

Solid State Communications

Volumn 143, Issue 4-5, 2007, Pages 213-216

  Batra, Y ^a   Kabiraj, D ^a   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

A. Nanocrystals; A. Semiconductors; D. Charge retention properties; D. Optical properties

Indexed keywords

ANNEALING; ELECTRON ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYSTERESIS; MICROOPTICS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM;

CAPACITANCE-VOLTAGE; CHARGE RETENTION; CHARGE RETENTION PROPERTIES; FABRICATED METAL-OXIDE-SEMICONDUCTOR;

NANOSTRUCTURED MATERIALS;

EID: 34250900925     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.05.026     Document Type: Article

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