GaN metal-semiconductor-metal photodetectors prepared on nanorod template

IEEE Photonics Technology Letters

Volumn 22, Issue 9, 2010, Pages 625-627

  Chang, S J ^a   Wang, S M ^a   Chang, P C ^b   Kuo, C H ^c   Young, S J ^d   Chen, T P ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Nanorod template; Photodetector (PD); Ultraviolet (UV)

Indexed keywords

CRYSTAL QUALITIES; GAN METAL-SEMICONDUCTOR-METAL; PHOTOCONDUCTIVE GAINS; REJECTION RATIOS; SAPPHIRE SUBSTRATES; ULTRA-VIOLET; ULTRAVIOLET (UV);

GALLIUM NITRIDE; HETEROJUNCTIONS; NANORODS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SAPPHIRE;

GALLIUM ALLOYS;

EID: 77950645099     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2043354     Document Type: Article

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