Influence of growth temperature of TiO 2 buffer on structure and PL properties of ZnO films

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4423-4425

  Zhang, Weiying ^a,b   Zhao, Jianguo ^a   Liu, Zhenzhong ^a   Liu, Zhaojun ^a   Fu, Zhuxi ^b  

^a LUOYANG NORMAL COLLEGE   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Buffer layer; Growth temperature; ZnO

Indexed keywords

BUFFER LAYERS; GROWTH TEMPERATURE; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL PROPERTIES; REACTIVE SPUTTERING; TITANIUM DIOXIDE; ZINC SULFIDE;

CRYSTAL QUALITIES; DC REACTIVE SPUTTERING; FULL WIDTH HALF MAXIMUM; HEXAGONAL WURTZITE STRUCTURE; PL PROPERTY; RANDOM ORIENTATIONS; SI(1 0 0); UV EMISSIONS;

ZINC OXIDE;

EID: 77950596281     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.12.064     Document Type: Article

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