Growth of high quality rutile TiO2 thin film using ZnO buffer layer on Si(100) substrate

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5877-5880

  Cho, M H ^a   Lee, G H ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Dong Eui University   (South Korea)

Author keywords

Dielectrics; Si substrate; Thin film; TiO2 rutile; ZnO buffer layer

Indexed keywords

BUFFER LAYERS; DIELECTRIC FILMS; MAGNETRON SPUTTERING; SUBSTRATES; THIN FILMS; ZINC OXIDE;

CRYSTALLINE QUALITY; RUTILE THIN FILMS; THICKNESS RANGE;

FILM GROWTH;

EID: 44249096106     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.048     Document Type: Article

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