Study of plasma-induced damage of porous ultralow- k dielectric films during photoresist stripping

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 156-163

  Xu, Songlin ^a   Qin, Ce ^a   Diao, Li ^a   Gilbert, Dave ^a   Hou, Li ^a   Wiesnoski, Allan ^a   Busch, Eric ^b,c   McGowan, Ricky ^b   White, Brian ^b,d   Weber, Frank ^b  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b SEMATECH   (United States)

^c QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^d Advanced Process Control   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL-DAMASCENE PROCESS; PHOTORESIST STRIPPING; STRIP CHEMISTRY;

INTEGRATED CIRCUITS; ION BEAMS; OPTIMIZATION; PHOTORESISTS; POROUS MATERIALS; SENSITIVITY ANALYSIS;

DIELECTRIC FILMS;

EID: 34047160067     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2431349     Document Type: Article

References (12)

1. M. Bohr, Tech. Dig. - Int. Electron Devices Meet. 1995, 241.
2. International Technology Roadmap for Semiconductors, 2004 Update.
3. Low Dielectric Constant Materials for IC Applications, Spring Series in Advanced Microelectronics Vol. 9, edited by, P. S. Ho, J. Leu, and, W. W. Lee, (Springer, Herdelberg, 2002).
4. M. Morgen, E. T. Ryan, J. H. Zhao, C. Hu, T. Cho, and P. S. Ho, Annu. Rev. Mater. Sci. 30, 645 (2000).
5. K. Maex, M. R. Baklanov, D. Shamiryan, F. Lacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003).
6. D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, and K. Maex, J. Vac. Sci. Technol. B 20, 1923 (2002).
7. F. Iacopi, S. H. Brongersma, B. Vandevelde, M. O'Toole, D. Degryse, Y. Travaly, and K. Maex, Microelectron. Eng. 75, 54 (2004).
8. P. Lazzeri, X. Hua, G. S. Oehrlein, M. Barrozi, E. Iacob, and M. Anderle, J. Vac. Sci. Technol. B 23, 1491 (2005).
9. X. Hua et al., J. Vac. Sci. Technol. B 24, 1238 (2006).
10. L. Peters, Semicond. Int. 10, 57 (2002).
11. M. A. Worsley, S. F. Bent, S. M. Gates, N. M. Fuller, W. Volksen, M. Steen, and T. Dolton, J. Vac. Sci. Technol. A 23, 395 (2005).
12. K. Yonekura, S. Sakamori, K. Goto, M. Matsuura, N. Fujiwara, and M. Yoneda, J. Vac. Sci. Technol. A 22, 548 (2004).