Dual-color electroluminescence (λ ≈ 450) and 650-700 nm) from a silicon-based light source

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 344-346

  Tan, W K ^a   Chen, Q ^a   Ye, J D ^a   Yu, M B ^a   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Dual color emission; Electroluminescence (EL); Light emitting; Photoluminescence (PL); Thin Si SiO2 multilayer stack

Indexed keywords

AMORPHOUS SILICON; ELECTRIC EXCITATION; LIGHT EMISSION; LIGHT SOURCES; PHOTOEXCITATION; PHOTOLUMINESCENCE; QUANTUM CONFINEMENT;

BLUE EMISSION; CARRIER INJECTION; DUAL-COLOR EMISSION; MULTILAYER STACK; RED EMISSION;

ELECTROLUMINESCENCE;

EID: 41749095342     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917932     Document Type: Article

References (20)

1. G. Franzo, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, "Electroluminescence of silicon nanocrystals in MOS structures," Appl. Phys. A, Solids Surf., vol. 74, no. 1, pp. 1-5, 2002.
2. 2 lattice: Experimental evidence with nanosecond pulses," Appl. Phys. Lett., vol. 79, no. 9, pp. 1249-1251, Aug. 2001.
3. L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburro, L. Pavesi, F. Priolo, D. Pacifici, F. Franzo, and F. Iacona, "Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals," Physica E, vol. 16, no. 3/4, pp. 297-308, Mar. 2003.
4. D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, "Silicon nanocrystals with ensemble quantum yields exceeding 60%," Appl. Phys. Lett., vol. 88, no. 23, pp. 233 116.1-233 116.3, 2006.
5. N. D. Zakharov, V. G. Talalaev, P. Werner, A. A. Tokikh, and G. E. Cirlin, "Room-temperature light emission from a highly strained Si/Ge superlattice," Appl. Phys. Lett., vol. 83, no. 15, pp. 3084-3086, Oct. 2003.
6. W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, "An efficient room-temperature silicon-based light-emitting diode," Nature, vol. 410, no. 6852, pp. 192-194, Mar. 2001.
7. M. Kittler, M. Reicher, T. Arguirov,W. Seifert, and X. Yu, "Silicon-based light emitters," Phys. Stat. Sol. A, vol. 203, no. 4, pp. 802-809, Mar. 2006.
8. H. S. Rong, A. S. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, "An all-silicon Raman laser," Nature, vol. 433, no. 7023, pp. 292-294, Jan. 2005.
9. N. M. Park, T. S. Kim, and S. J. Park, "Band gap engineering of amorphous silicon quantum dots for light-emitting diodes," Appl. Phys Lett., vol. 78, no. 17, pp. 2575-2577, Apr. 2001.
10. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, "Optical gain in silicon nanocrystals," Nature, vol. 408, no. 6811, pp. 440-444, Nov. 2000.
11. L. Rebohle, J. Von Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Frob, and K. Leo, "Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers," Appl. Phys. Lett., vol. 71, no. 19, pp. 2809-2811, Nov. 1997.
12. R. Huang, K. J. Chen, P. G. Han, H. P. Dong, D. Y. Chen, W. Li, J. Xu, Z. Y. Ma, and X. F. Huang, "Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio," Appl. Phys. Lett., vol. 90, pp. 093515.1-093515.3, 2007.
13. L. Tsybekov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, "Stable and efficient electroluminescence from a porous silicon-based bipolar device," Appl. Phys. Lett., vol. 68, no. 15, pp. 2058-2060, Apr. 1996.
14. S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, "Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu," Appl. Phys. Lett., vol. 90, no. 18, pp. 181 121.1-181 121.3, Apr. 2007.
15. 2 superlattices," Phys. Rev. Lett., vol. 76, no. 3, pp. 539-541, Jan. 1996.
16. x thin films with external quantum efficiency in percentages," Appl. Phys. Lett. vol. 88, no. 9, pp. 093102.1-093102.3, Feb. 2006.
17. 2 films without annealing," Appl. Phys. Lett., vol. 82, no. 4, pp. 538-540, Jan. 2003.
18. G. H. Kim, J. H. Kim, K. A. Jeon, and S. Y. Lee, "Blue photoluminescence of Si nanocrystallites embedded in silicon oxide," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 23, no. 4, pp. 978-981, Jul. 2005.
19. T. Uchino, N. Kurumoto, and N. Sagawa, "Structure and formation mechanism of blue-light-emitting centers in silicon and silica-based nanostructured materials," Phys. Rev. B, Condens. Matter, vol. 73, no. 23, pp. 233 203.1-233 203.4, Jun. 2006.
20. G. B. Li, L. S. Liao, X. B. Liu, X. Y. Hou, and X. Wang, "Stable and intense blue-green emission in porous silicon achieved by amine immersion and rapid thermal oxidation," Appl. Phys. Lett., vol. 70, no. 10, pp. 1284-1286, Mar. 1997.