A GaAs MESFET schottky diode barrier height reference circuit

IEEE Journal of Solid-State Circuits

Volumn 32, Issue 12, 1997, Pages 2023-2029

  Taylor, Stewart S ^{a,b,c,d,e,f,g,h,i}  

^a IEEE   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

^c CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e HEWLETT PACKARD COMPANY   (United States)

^f Tektronix ^*  (United States)

^g OREGON STATE UNIVERSITY   (United States)

^h OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

ⁱ PORTLAND STATE UNIVERSITY   (United States)

Author keywords

GaAs MESFET circuit; Reference voltage; Shottky diode

Indexed keywords

ELECTRIC NETWORK TOPOLOGY; ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

BARRIER HEIGHT REFERENCE CIRCUITS;

MESFET DEVICES;

EID: 0031333314     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.643660     Document Type: Article

References (9)

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