A robust smart power bandgap reference circuit for use in an automotive environment

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 7, 2002, Pages 949-952

  Horn, Wolfgang ^a   Zitta, Heinz ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Automotive; Bandgap reference; High temperature techniques; Parasitic n p n; Robustness; Smart power integrated circuit; Substrate coupling; Voltage reference

Indexed keywords

ELECTRIC LOADS; ELECTRIC POTENTIAL; MICROPROCESSOR CHIPS; TOPOLOGY;

BANDGAP REFERENCE CIRCUITS; SMART POWER INTEGRATED CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 0036642281     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.1015695     Document Type: Article

References (11)

1. Controlling substrate currents in junction-isolated ICs
2. A precision reference voltage source
3. A precision CMOS bandgap reference
4. Matching properties of MOS transistors
5. How to deal with substrate noise in analog CMOS circuits
6. Behavior of analog MOS integrated circuits at high temperatures
7. A high temperature precision amplifier
8. A 300 ° C dynamic-feedback instrumentation amplifier
9. Multiring active analogic protection for minority carrier injection supression in smart power technology
10. Substrate current protection in smart power ICs