Nanoscale stress field evaluation with shallow trench isolation structure assessed by cathodoluminescence spectroscopy, raman spectroscopy, and finite element method analyses

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2506-2510

  Kodera, Masako ^a   Iguchi, Tadashi ^a   Tsuchiya, Norihiko ^a   Tamura, Mizuki ^a   Kakinuma, Shigeru ^b   Naka, Nobuyuki ^b   Kashiwagi, Shinsuke ^b  

^a TOSHIBA CORPORATION   (Japan)

^b HORIBA LTD   (Japan)

Author keywords

Cathodoluminescence; CL; FEM; Raman; STI; Stress

Indexed keywords

CATHODOLUMINESCENCE; DIELECTRIC MATERIALS; LIGHT EMISSION; LSI CIRCUITS; LUMINESCENCE; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; SPECTROSCOPY; SPECTRUM ANALYSIS; SPEECH ANALYSIS; STRESS CONCENTRATION; STRESSES;

CATHODOLUMINESCENCE SPECTROSCOPIES; CL; ELECTRICAL CHARACTERISTICS; FEM; FINITE ELEMENT METHOD ANALYSES; FINITE-ELEMENT METHODS; HIGH STRESSES; NANOSCALE; RAMAN; SCALE STRESSES; SHALLOW TRENCH ISOLATIONS; SI SUBSTRATES; STI; STI STRUCTURES; STRESS DISTRIBUTIONS; STRESS ENGINEERINGS; STRESS FIELDS;

FINITE ELEMENT METHOD;

EID: 54249116371     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2506     Document Type: Article

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