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Volumn 44, Issue 12, 2005, Pages 8445-8447

Thickness dependence of strain field distribution in SiGe relaxed buffer layers

Author keywords

Buffer layer; Crosshatch; Micro Raman; SiGe; Strain field

Indexed keywords

GROWTH KINETICS; HETEROJUNCTIONS; MORPHOLOGY; RAMAN SPECTROSCOPY; STRAIN; SURFACE ROUGHNESS;

BUFFER LAYERS; CROSSHATCH; MICRO-RAMAN; STRAIN FIELD;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 31544464355 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.8445 Document Type: Article

Times cited : (10)

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