AlGaN/GaN HEMT with integrated recessed schottky-drain protection diode

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 901-903

  Bahat Treidel, Eldad ^a   Lossy, Richard ^a   Würfl, Joachim ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); Protection diode; Recessed Schottky drain diode

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); DEVICE SIMULATIONS; ELECTRONIC MECHANISMS; HIGH ROBUSTNESS; ON-STATE RESISTANCE; PROTECTION DIODE; PROTECTION DIODES; RECESSED SCHOTTKY-DRAIN DIODE; REVERSE BLOCKING; REVERSE BLOCKING CAPABILITY; SCHOTTKY; TRANSISTOR CHANNELS;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LITHIUM BATTERIES;

DIODES;

EID: 69949171987     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026437     Document Type: Article

References (6)

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