Fabrication of AlGaN/GaN HFET with a high breakdown voltage on 4-inch Si (111) substrate by MOVPE

Materials Research Society Symposium Proceedings

Volumn 955, Issue , 2006, Pages 369-374

  Niiyama, Yuki ^a   Kato, Sadahiro ^a   Sato, Yoshihiro ^a   Iwami, Masayuki ^a   Li, Jiang ^a   Takehara, Hironari ^a   Kambayashi, Hiroshi ^a   Ikeda, Nariaki ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ELECTRIC BREAKDOWN; FABRICATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES;

GROWTH PRESSURE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR (HFET); HIGH BREAKDOWN VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 40949085694     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0955-i16-06     Document Type: Conference Paper

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