Non-hydrogen-transport characteristics of dynamic negative-bias temperature instability

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 269-271

  Teo, Zhi Qiang ^a   Ang, Diing Shenp ^b   Ng, Chee Mang ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

Dispersive transport; Hole traps; Interface traps; Reaction diffusion; Ultrafast switching measurement

Indexed keywords

DEEP LEVEL; DELTA-V; DISPERSIVE TRANSPORT; HYDROGEN TRANSPORT; INTERFACE TRAPS; NEGATIVE BIAS TEMPERATURE INSTABILITY; THRESHOLD VOLTAGE SHIFTS; TRANSPORT CHARACTERISTICS; TRANSPORT MODELS; ULTRAFAST SWITCHING; ULTRAFAST SWITCHING MEASUREMENT;

HOLE TRAPS; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

HYDROGEN;

EID: 77950069929     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039848     Document Type: Article

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