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Volumn 30, Issue 7, 2009, Pages 751-753

Effect of hole-trap distribution on the power-law time exponent of NBTI

Author keywords

Bias temperature instability (BTI); Deep level hole traps (DLHTs); Energy distribution of trapped holes; Interface states

Indexed keywords

BIAS-TEMPERATURE INSTABILITY (BTI); CHARGE-UP; CONDUCTION BAND EDGE; DEEP LEVEL; DEEP-LEVEL HOLE TRAPS (DLHTS); ENERGY DISTRIBUTION OF TRAPPED HOLES; ENERGY DISTRIBUTIONS; ENERGY LEVEL; INTERFACE STATES; NEGATIVE GATE; NMOSFET; PHENOMENOLOGICAL RELATIONSHIP; PMOSFET; POWER-LAW; STRESS-INDUCED; TIME EXPONENT; TRAP DISTRIBUTIONS;

EID: 67650432119     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020445     Document Type: Article
Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.