Ultrafast measurement on NBTI

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 275-277

  Du, G A ^a   Ang, D S ^a   Teo, Z Q ^a   Hu, Y Z ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Bias temperature instability; Fast recovery; Quasi real time; Time critical measurement

Indexed keywords

ELECTRONIC EQUIPMENT TESTING; LOAD TESTING; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY;

BIAS-TEMPERATURE INSTABILITY; CAPACITIVE LOADS; CORRECTION METHODS; FAST RECOVERY; PARALLEL TESTING; QUASI-REAL-TIME; QUASI-STEADY STATE; RELATIVE DELAYS; SINGLE GATES; STANDARD EQUIPMENTS; SUB THRESHOLDS; THRESHOLD VOLTAGE EXTRACTIONS; TIME-CRITICAL MEASUREMENT; ULTRAFAST MEASUREMENTS; WAFER LEVELS; WAVE FORMS;

DRAIN CURRENT;

EID: 62549124949     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2011060     Document Type: Article

References (11)

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