|
Volumn , Issue , 2009, Pages 1002-1004
|
Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFET
|
Author keywords
Negative bias temperature instability (NBTI); Threshold voltage; Ultrafast switching (UFS)
|
Indexed keywords
GATE STRESS;
GENERATION RATE;
NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);
OXYNITRIDES;
PMOSFET;
POWER-LAW;
SATURATION LEVELS;
STEADY STATE;
STRESS TIME;
THRESHOLD VOLTAGE SHIFTS;
ULTRA-FAST;
ULTRA-THIN;
ULTRAFAST SWITCHING (UFS);
MOSFET DEVICES;
NEGATIVE TEMPERATURE COEFFICIENT;
NITRIDES;
THERMODYNAMIC STABILITY;
THRESHOLD VOLTAGE;
|
EID: 70449115465
PISSN: 15417026
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IRPS.2009.5173399 Document Type: Conference Paper |
Times cited : (9)
|
References (6)
|