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Volumn , Issue , 2009, Pages 1002-1004

Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFET

Author keywords

Negative bias temperature instability (NBTI); Threshold voltage; Ultrafast switching (UFS)

Indexed keywords

GATE STRESS; GENERATION RATE; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); OXYNITRIDES; PMOSFET; POWER-LAW; SATURATION LEVELS; STEADY STATE; STRESS TIME; THRESHOLD VOLTAGE SHIFTS; ULTRA-FAST; ULTRA-THIN; ULTRAFAST SWITCHING (UFS);

EID: 70449115465     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173399     Document Type: Conference Paper
Times cited : (9)

References (6)
  • 3
    • 51649093838 scopus 로고    scopus 로고
    • Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery
    • April
    • G.A. Du, D.S. Ang, Y.Z. Hu, S. Wang and C.M. Ng, "Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery", Reliability Physics Symposium, pp. 735-736, April.2008
    • (2008) Reliability Physics Symposium , pp. 735-736
    • Du, G.A.1    Ang, D.S.2    Hu, Y.Z.3    Wang, S.4    Ng, C.M.5
  • 4
    • 33847240065 scopus 로고    scopus 로고
    • Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of timezero delay for on-the-fly measurements
    • Ahmad Ehteshamul Islam, Haldun Kufluoglu, Dhanoop Varghese and Muhammad Ashraful Alam, "Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of timezero delay for on-the-fly measurements", Appl. Phys. Lett, pp. 90, 083505, 2007
    • (2007) Appl. Phys. Lett
    • Ehteshamul Islam, A.1    Kufluoglu, H.2    Varghese, D.3    Ashraful Alam, M.4
  • 5
    • 34548804466 scopus 로고    scopus 로고
    • The Universality of NBTI Relaxation and its Implications for Modeling and Characterization
    • April
    • T. Grasser, W. Gos, V. Sverdlov and B. Kaczer, "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization", Reliability Physics Symposium, pp. 268-280, April.2007
    • (2007) Reliability Physics Symposium , pp. 268-280
    • Grasser, T.1    Gos, W.2    Sverdlov, V.3    Kaczer, B.4
  • 6
    • 29244455322 scopus 로고    scopus 로고
    • Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
    • Dec
    • D.S. Ang, S. Wang and C.H. Ling, "Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET", Electron Device Letters, vol. 26, pp. 906-908, Dec 2005
    • (2005) Electron Device Letters , vol.26 , pp. 906-908
    • Ang, D.S.1    Wang, S.2    Ling, C.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.