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Volumn , Issue , 2009, Pages

Design considerations for GaN based MMICs

Author keywords

Class E power amplifiers; Control components; Gallium nitride; Wideband power amplifiers

Indexed keywords

CIRCUIT DESIGNS; CLASS-E POWER AMPLIFIERS; CONTROL COMPONENTS; DESIGN CONSIDERATIONS; HIGH EFFICIENCY; HIGH POWER SWITCHING; WIDEBAND POWER AMPLIFIER;

EID: 77949819563     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMCAS.2009.5386036     Document Type: Conference Paper
Times cited : (17)

References (24)
  • 6
    • 77949853071 scopus 로고    scopus 로고
    • S-Band High Efficiency Class-E Power Amplifier MMICs Manufactured with a Production Released GaN on SiC Process
    • Campbell, C. F. and Dumka, D. C., "S-Band High Efficiency Class-E Power Amplifier MMICs Manufactured with a Production Released GaN on SiC Process". 2009 GOMAC-Tech Digest, pp. 227-230.
    • 2009 GOMAC-Tech Digest , pp. 227-230
    • Campbell, C.F.1    Dumka, D.C.2
  • 7
    • 35648969670 scopus 로고    scopus 로고
    • A Highly Efficient 7 to 14 GHz Monolithic Class-E Power Amplifier
    • Oct
    • Tayrani, R., "A Highly Efficient 7 to 14 GHz Monolithic Class-E Power Amplifier," Microwave Journal, Oct. 2007, pp. 146.
    • (2007) Microwave Journal , pp. 146
    • Tayrani, R.1
  • 9
    • 77949797008 scopus 로고    scopus 로고
    • TriQuint Semiconductor Datasheet, TGA9092-SCC.
    • TriQuint Semiconductor Datasheet, TGA9092-SCC.
  • 13
    • 34748840944 scopus 로고    scopus 로고
    • Meharry, Lender, R. J., Chu, K., Gunter, L. L., and Beech, K. E., Multi-Watt Wideband MMICs in GaN and GaAs, IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 631-634.
    • Meharry, Lender, R. J., Chu, K., Gunter, L. L., and Beech, K. E., "Multi-Watt Wideband MMICs in GaN and GaAs," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 631-634.
  • 14
    • 34748901317 scopus 로고    scopus 로고
    • Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology
    • Gassmann, J., Watson, P., Kehias, L. and Henry, G., "Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 615-618.
    • (2007) IEEE MTT-S Int. Microwave Symp. Dig , pp. 615-618
    • Gassmann, J.1    Watson, P.2    Kehias, L.3    Henry, G.4
  • 18
    • 77949807561 scopus 로고    scopus 로고
    • TriQuint Semiconductor Datasheet, TGA2509.
    • TriQuint Semiconductor Datasheet, TGA2509.
  • 19
    • 50949126401 scopus 로고    scopus 로고
    • High Power RF Switch MMICs Development in GaN-on-Si HFET Technology
    • Ma Yu, M., Ward, R. J. and Hegazi, G. M., "High Power RF Switch MMICs Development in GaN-on-Si HFET Technology," RWS. Dig., 2008, pp. 855-858.
    • (2008) RWS. Dig , pp. 855-858
    • Ma Yu, M.1    Ward, R.J.2    Hegazi, G.M.3
  • 24
    • 34748853216 scopus 로고    scopus 로고
    • High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts
    • Simin, G., Yang, Z-J. and Shur, M., "High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 457-460.
    • (2007) IEEE MTT-S Int. Microwave Symp. Dig , pp. 457-460
    • Simin, G.1    Yang, Z.-J.2    Shur, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.