-
2
-
-
30344481710
-
A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9GHz
-
Jan
-
Xu, H., Gao, S., Heikman, S., Long, S. I., Mishra, U. K., and York, R. A., "A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9GHz," IEEE Microwave and Wireless Component Letters, vol. 16, no. 1, pp. 22-24, Jan. 2006.
-
(2006)
IEEE Microwave and Wireless Component Letters
, vol.16
, Issue.1
, pp. 22-24
-
-
Xu, H.1
Gao, S.2
Heikman, S.3
Long, S.I.4
Mishra, U.K.5
York, R.A.6
-
3
-
-
30344465042
-
A Two-Stage Quasi-Class-E Power Amplifier in GaN HEMT Technology
-
Jan
-
Gao, S., Xu, H., Heikman, S., Mishra, U. K., and York, R. A., "A Two-Stage Quasi-Class-E Power Amplifier in GaN HEMT Technology," IEEE Microwave and Wireless Component Letters, vol. 16, no. 1, pp. 28-30, Jan. 2006.
-
(2006)
IEEE Microwave and Wireless Component Letters
, vol.16
, Issue.1
, pp. 28-30
-
-
Gao, S.1
Xu, H.2
Heikman, S.3
Mishra, U.K.4
York, R.A.5
-
4
-
-
84887453195
-
High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC
-
Sheppard, S., Pribble, W., Smith, R., Saxler, A., Allen, S., Milligan, J. and Pengelly, R., "High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC," CS MANTECH Conference, 2006, pp. 175-178.
-
(2006)
CS MANTECH Conference
, pp. 175-178
-
-
Sheppard, S.1
Pribble, W.2
Smith, R.3
Saxler, A.4
Allen, S.5
Milligan, J.6
Pengelly, R.7
-
5
-
-
84887500700
-
SiC and GaN Wide Bandgap Technology Commercial Status
-
Milligan, J., Sheppard, S., Pribble, W., Ward, A., and Wood, S., "SiC and GaN Wide Bandgap Technology Commercial Status," CS MANTECH Conference, 2008.
-
(2008)
CS MANTECH Conference
-
-
Milligan, J.1
Sheppard, S.2
Pribble, W.3
Ward, A.4
Wood, S.5
-
6
-
-
77949853071
-
S-Band High Efficiency Class-E Power Amplifier MMICs Manufactured with a Production Released GaN on SiC Process
-
Campbell, C. F. and Dumka, D. C., "S-Band High Efficiency Class-E Power Amplifier MMICs Manufactured with a Production Released GaN on SiC Process". 2009 GOMAC-Tech Digest, pp. 227-230.
-
2009 GOMAC-Tech Digest
, pp. 227-230
-
-
Campbell, C.F.1
Dumka, D.C.2
-
7
-
-
35648969670
-
A Highly Efficient 7 to 14 GHz Monolithic Class-E Power Amplifier
-
Oct
-
Tayrani, R., "A Highly Efficient 7 to 14 GHz Monolithic Class-E Power Amplifier," Microwave Journal, Oct. 2007, pp. 146.
-
(2007)
Microwave Journal
, pp. 146
-
-
Tayrani, R.1
-
8
-
-
34748921752
-
AlGaN/GaN HEMTs with PAE of 53% at 35GHz
-
Kao, M. Y., Lee, C., Hajji, R., Saunier, P. and Tserng, H. Q., "AlGaN/GaN HEMTs with PAE of 53% at 35GHz," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 627-629.
-
(2007)
IEEE MTT-S Int. Microwave Symp. Dig
, pp. 627-629
-
-
Kao, M.Y.1
Lee, C.2
Hajji, R.3
Saunier, P.4
Tserng, H.Q.5
-
9
-
-
77949797008
-
-
TriQuint Semiconductor Datasheet, TGA9092-SCC.
-
TriQuint Semiconductor Datasheet, TGA9092-SCC.
-
-
-
-
11
-
-
84891294046
-
-
John Wiley and Sons
-
Vendelin, G. D., Pavio, A. M. and Rohde, U. L., Microwave Circuit Design Using Linear and Nonlinear Techniques, John Wiley and Sons, 2005.
-
(2005)
Microwave Circuit Design Using Linear and Nonlinear Techniques
-
-
Vendelin, G.D.1
Pavio, A.M.2
Rohde, U.L.3
-
12
-
-
0036438030
-
An Ultra-Wideband GaAs pHEMT Driver Amplifier for Fiber Optic Communications at 40 Gb/s and Beyond
-
Heins, M. S., Carroll, J. M., Kao, M. Y., Steinbeiser, C. F., Landon, T. R., and Campbell, C. F. "An Ultra-Wideband GaAs pHEMT Driver Amplifier for Fiber Optic Communications at 40 Gb/s and Beyond." 2002 Optical Fiber Communication Conference Digest, pp. 273-274.
-
2002 Optical Fiber Communication Conference Digest
, pp. 273-274
-
-
Heins, M.S.1
Carroll, J.M.2
Kao, M.Y.3
Steinbeiser, C.F.4
Landon, T.R.5
Campbell, C.F.6
-
13
-
-
34748840944
-
-
Meharry, Lender, R. J., Chu, K., Gunter, L. L., and Beech, K. E., Multi-Watt Wideband MMICs in GaN and GaAs, IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 631-634.
-
Meharry, Lender, R. J., Chu, K., Gunter, L. L., and Beech, K. E., "Multi-Watt Wideband MMICs in GaN and GaAs," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 631-634.
-
-
-
-
14
-
-
34748901317
-
Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology
-
Gassmann, J., Watson, P., Kehias, L. and Henry, G., "Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 615-618.
-
(2007)
IEEE MTT-S Int. Microwave Symp. Dig
, pp. 615-618
-
-
Gassmann, J.1
Watson, P.2
Kehias, L.3
Henry, G.4
-
15
-
-
84891294046
-
-
John Wiley and Sons
-
Vendelin, G. D., Pavio, A. M. and Rohde, U. L., Microwave Circuit Design Using Linear and Nonlinear Techniques, John Wiley and Sons, 2005.
-
(2005)
Microwave Circuit Design Using Linear and Nonlinear Techniques
-
-
Vendelin, G.D.1
Pavio, A.M.2
Rohde, U.L.3
-
16
-
-
0035683428
-
New Design Method of Uniform and Nonuniform Distributed Power Amplifiers
-
Dec
-
Duperrier, C., Campovecchio, M., Roussel, L., Lajugie, M. and Quere, R., "New Design Method of Uniform and Nonuniform Distributed Power Amplifiers", IEEE Trans. Microwave Theory Tech., vol. 49, pp. 2494-2500, Dec. 2001.
-
(2001)
IEEE Trans. Microwave Theory Tech
, vol.49
, pp. 2494-2500
-
-
Duperrier, C.1
Campovecchio, M.2
Roussel, L.3
Lajugie, M.4
Quere, R.5
-
17
-
-
57849160785
-
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
-
Campbell, C. F., Lee, C., Williams, V., Kao, M. Y., Tserng, H. Q. and Saunier, P., "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology". 2008 Compound Semiconductor Integrated Circuit Symposium, pp. 159-162.
-
(2008)
Compound Semiconductor Integrated Circuit Symposium
, pp. 159-162
-
-
Campbell, C.F.1
Lee, C.2
Williams, V.3
Kao, M.Y.4
Tserng, H.Q.5
Saunier, P.6
-
18
-
-
77949807561
-
-
TriQuint Semiconductor Datasheet, TGA2509.
-
TriQuint Semiconductor Datasheet, TGA2509.
-
-
-
-
19
-
-
50949126401
-
High Power RF Switch MMICs Development in GaN-on-Si HFET Technology
-
Ma Yu, M., Ward, R. J. and Hegazi, G. M., "High Power RF Switch MMICs Development in GaN-on-Si HFET Technology," RWS. Dig., 2008, pp. 855-858.
-
(2008)
RWS. Dig
, pp. 855-858
-
-
Ma Yu, M.1
Ward, R.J.2
Hegazi, G.M.3
-
20
-
-
57349192228
-
High Power AlGaN/GaN Ku-Band MMIC SPDT Switch and Design Consideration
-
Ma, B. Y., Boutros, K. S., Hacker, J. B. and Nagy, G., "High Power AlGaN/GaN Ku-Band MMIC SPDT Switch and Design Consideration," IEEE MTT-S Int. Microwave Symp. Dig., 2008, pp. 1473-1476.
-
(2008)
IEEE MTT-S Int. Microwave Symp. Dig
, pp. 1473-1476
-
-
Ma, B.Y.1
Boutros, K.S.2
Hacker, J.B.3
Nagy, G.4
-
21
-
-
36749078229
-
The Development of a High Power SP4T RF Switch in GaN HFET Technology
-
Dec
-
Yu, M., Ward, R. J., Hovda, D. H., Hegazi, G. M., Hanson, A. W. and Linthicum, K., "The Development of a High Power SP4T RF Switch in GaN HFET Technology", IEEE Microwave and Wireless Components Letters, vol. 17, No 12, pp. 894-896, Dec. 2007.
-
(2007)
IEEE Microwave and Wireless Components Letters
, vol.17
, Issue.12
, pp. 894-896
-
-
Yu, M.1
Ward, R.J.2
Hovda, D.H.3
Hegazi, G.M.4
Hanson, A.W.5
Linthicum, K.6
-
22
-
-
10644291024
-
Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors
-
Dec
-
Koudymov, A., Rai, S., Adivarahan, V., Gaevski, M., Yang, J., Simin, G. and Khan, M. A. "Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors", IEEE Microwave and Wireless Components Letters, vol. 14, No 12, pp. 560-562, Dec. 2004.
-
(2004)
IEEE Microwave and Wireless Components Letters
, vol.14
, Issue.12
, pp. 560-562
-
-
Koudymov, A.1
Rai, S.2
Adivarahan, V.3
Gaevski, M.4
Yang, J.5
Simin, G.6
Khan, M.A.7
-
23
-
-
34748813103
-
An S-band 100W GaN Protection Switch
-
Hangai, M., Nishino, T., Kamo, Y. and Miyazaki, M., "An S-band 100W GaN Protection Switch," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 1389-1392.
-
(2007)
IEEE MTT-S Int. Microwave Symp. Dig
, pp. 1389-1392
-
-
Hangai, M.1
Nishino, T.2
Kamo, Y.3
Miyazaki, M.4
-
24
-
-
34748853216
-
High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts
-
Simin, G., Yang, Z-J. and Shur, M., "High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 457-460.
-
(2007)
IEEE MTT-S Int. Microwave Symp. Dig
, pp. 457-460
-
-
Simin, G.1
Yang, Z.-J.2
Shur, M.3
|