AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and multi-function MMIC applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 627-629

  Kao, Ming Yih ^a   Lee, Cathy ^a   Hajji, Rached ^a   Saunier, Paul ^a   Tserng, Hua Quen ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

HEMT; Microwave FETs; Millimeter wave FETs; MMIC power amplifiers

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SILICON CARBIDE;

MMIC POWER AMPLIFIERS; POWER DENSITY; POWER PERFORMANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748921752     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.379979     Document Type: Conference Paper

References (4)

1. M. Kao, et al., "High Performance Dual Recess 0.15-μm PHEMT for Multi-Function MMIC Applications," 2006 IEEE CSIC Symposium Digest, pp. 129-132, November 12-15, 2006.
2. J. Moon, et al., "Gate-Recessed AlGaN-GaN HEMTs for High-Performance Millimeter-Wave Applications," IEEE Electron Device Letters, Vol. 26, No. 6, June 2005, pp. 348-350.
3. C. Lee et al., "AlGaN-GaN HEMTs on SiC with CW Power Performance of > 4 W/mm and 23% PAE at 35 GHz," IEEE Electron Device Letters, Vol. 24, No. 10, Oct. 2003, pp. 616-618.
4. M. Micovic, et al., "Ka-band MMIC Power amplifier in GaN HFET technology," 2004 IEEE MTT-S Int. Microwave Symposium Digest, pp. 1653-1656, June 2004.