High-power III-nitride integrated microwave switch with capacitively-coupled contacts

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 457-460

  Simin, G ^a,b   Yang, Z J ^b   Shur, M ^a,b  

^a IEEE

^b The Department of Mechanical Engineering   (United States)

Author keywords

AIGaN; FET; GaN; HEMT; Power; RF; Switch

Indexed keywords

ELECTRIC CONTACTS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSERTION LOSSES; INTEGRATED CIRCUITS; MICROWAVE DEVICES;

ALIGNMENT-FREE TECHNOLOGY; CAPACITIVELY-COUPLED CONTACTS; SWITCHING POWERS;

ELECTRIC SWITCHES;

EID: 34748853216     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380487     Document Type: Conference Paper

References (8)

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