An S-band 100W GaN protection switch

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1389-1392

  Hangai, Masatake ^a   Nishino, Tamotsu ^a   Kamo, Yoshitaka ^a   Miyazaki, Moriyasu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

AlGaN GaN; Asymmetric configuration; FET; High power; Low loss; Series shunt shunt; Switch

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC POWER MEASUREMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; INSERTION LOSSES; SWITCHING CIRCUITS;

ASYMMETRIC CONFIGURATION; POWER HANDLING; PROTECTION SWITCHES; SHUNT CONFIGURATION;

SEMICONDUCTOR SWITCHES;

EID: 34748813103     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380490     Document Type: Conference Paper

References (14)

1. J. Sherman, "A PIN Diode Switch That Operates at 100 Watts CW at C-band," IEEE MTT-S Dig., vol. 3, June 1991, pp.1307-1310.
2. T. Shigematsu, N. Suematsu, N. Takeuchi, Y. Iyama, A. Mizobuchi, "A 6-18GHz 20W SPDT Switch Using Shunt Discrete PIN Diodes," IEEE MTT-S Dig., vol.2, June 1997, pp.527-530.
3. J. Bellanton, D. Bartle, D. Payne, G McDermott, S. Bandla, R. Tayrani, L. Raffaelli, "A Monolithic High Power Ka Band PIN Switch," IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, June 1989, pp.47-50.
4. S. Paek, H. Kang, K. Jeon, M. Jeong, D. Kim, C. Lim, J. Lee, W. Lee, K. Chung, "1-26GHz High Power p-i-n Diode Switch," IEEE MTT-S Dig., vol.1, June 2000, pp.505-508.
5. Y.Ayasli, R.Mozzi, L.Hanes and L.D.Reynolds, "An X-Band 10 W Monolithic Transmit-Receive GaAs FET Switch," IEEE MTT-S Dig., vol.82, June 1982, pp.42-46.
6. M.Matsunaga, K.Nakahara, "High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs," IEICE Trans., Vol.E75-C No.2, 1992, pp.252-258.
7. M. Hangai, T. Nishino, K. Miyaguchi, M. Hieda, K. Endo, M. Miyazaki, "A Millimeter-Wave Low-Loss and High-Power Switch MMIC Using Multiple FET Resonators," IEEE IMS2006, TH3B-5, 2006.
8. M. Shifrin, "Monolithic FET Structures for High-Power Control Component Applications," IEEE Trans. MTT, vol.37, No. 12, Dec. 1989.
9. F. McGrath, C. Varmazis, C. Kermarrec, R. Pratt, "Novel High Performance SPDT Power Switches Using Multi-Gate FET's," IEEE MTT-S Dig., vol.2 June 1991, pp.839-842.
10. T. Yamaguchi, T. Sawai, M. Nishida and M. Sawada, "Ultra-Compact IWGaAs SPDT Switch IC," IEEE MTT-S Dig, vol.1, June 1999, pp.315-318.
11. H.Ishida, YHirose, T.Murata, Y.Dseda, T.Matsuo, K.Inoue, Y.Uemoto, T.Tanaka, T.Egawa, and D.Ueda, "A High-Power RF Switch IC using AlGaN/GaN HFETs with Single-Stage Configuration," IEEE Trans. Electron Devices, vol.52, Issue 8, Aug. 2005, pp.1893-1899.
12. M. Hirose, Y. Takada, M. Kuraguchi, T. Sasaki, K. Tsuda, "A 1.9 GHz SPDT Switch Implemented with GaN HFETs featuring Two Different Depth-Recesses in i-AlGaN," Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE, Oct. 2004, pp.163-166.
13. th GaAS Symposium, 2004, pp.83-86.
14. Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Khan, "High-Power Operation of III-N MOSHFET RF Switches," Microwave and Wireless Components Letters, IEEE [see also IEEE Microwave and Guided Wave Letters, vol.15, Issue 12, Dec. 2005, pp.850-852.