The development of a high power SP4T RF switch in GaN HFET technology

IEEE Microwave and Wireless Components Letters

Volumn 17, Issue 12, 2007, Pages 894-896

  Yu, Mark ^a,b   Ward, Robert J ^b   Hovda, Donald H ^b   Hegazi, Gamal M ^a,b   Hanson, Allen W ^c   Linthicum, Kevin ^c  

^a IEEE   (United States)

^b ROCKWELL COLLINS   (United States)

^c NITRONEX CORPORATION   (United States)

Author keywords

GaN heterstructure field effect transistor (HFET); High power switches; Monolithic microwave integrated circuit (MMIC) switches; Single pole double throw (SPDT); Single pole four throw (SP4T)

Indexed keywords

HETERSTRUCTURE FIELD EFFECT TRANSISTOR (HFET); HIGH POWER SWITCHES; ON-STATE RESISTANCE; SINGLE-POLE DOUBLE THROW (SPDT); SINGLE-POLE FOUR THROW (SP4T);

CAPACITANCE; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

ELECTRIC SWITCHES;

EID: 36749078229     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2007.910515     Document Type: Article

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