High-efficiency amplifiers using AlGaN/GaN HEMTs on SiC

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 175-178

  Sheppard, Scott ^a   Pribble, Bill ^a   Smith, R Peter ^a   Saxler, Adam ^a   Allen, Scott ^a   Milligan, Jim ^a   Pengelly, Ray ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Class E; GaN HEMT; High efficiency; RF; Switch mode

Indexed keywords

CLASS E; GAN HEMTS; HIGH-EFFICIENCY; RF; SWITCH MODES;

GALLIUM NITRIDE; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887453195     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. G. Fischer, W. Eckl, G. Kaminski, "RF-MEMS and SiC/GaN as enabling technologies for a reconfigurable multi-band/multi-standard radio, " Bell Labs Technical Journal, Volume 7, Issue 3, pp. 169-189.
2. R. Tayrani, "Broadband monolithic S-band class-E power amplifier design, " RF Design, April 2004, pp. 24-28.
3. P. J. Poggi, "Application of High Efficiency Techniques to the Design of RF Power Amplifier and Amplifier Control Circuits in Tactical Radio Equipment, " Proceedings of MILCOM '95, San Diego, California, Nov 5-8, 1995, pp 743-747.
4. A. Saxler et al., "III-Nitride Heterostructures on High- Purity Semi-Insulating 4H-SiC Substrates for High-Power RF Transistors, " International Workshop on Nitride Semiconductors, July 19 - 23, 2004 Sheraton Station Square Pittsburgh, Pennsylvania, USA.
5. J.W. Milligan, J. Henning, S.T. Allen, A. Ward, and J.W. Palmour, "SiC MESFET and MMIC Technology Transition to Production", presented at the 2005 International Conference on Compound Semiconductor Manufacturing Technology, April 2005, New Orleans, LA, USA.
6. D. Kimball, J. Jeong, C. Hsia, P. Draxler, P. Asbeck, D. Choi, W. Pribble and R. Pengelly, "Application of GaN Class E Amplifers in EER/ET Amplifier Systems", presented at the 2006 IEEE Radio and Wireless Symposium, January 2006, San Diego, CA, USA.
7. M. Rosker, "Wide Bandgap Semiconductor Devices and MMICs: A DARPA Perspective", presented at the 2005 International Conference on Compound Semiconductor Manufacturing Technology, April 2005, New Orleans, LA, USA.