High power AlGaN/GaN Ku-band MMIC SPDT switch and design consideration

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 1473-1476

  Ma, Bob Y ^a   Boutros, Karim S ^a   Hacker, Jonathan B ^a   Nagy, Gabor ^a  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

Author keywords

AlGaN GaN; GaN; High power; Monolithic microwave integrated circuit (MMIC); Switch

Indexed keywords

BANDPASS FILTERS; DC GENERATORS; ELECTRIC CONDUCTIVITY; ELECTRIC SWITCHES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; IONIZATION OF GASES; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; POLES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES;

1-DB COMPRESSION POINTS; ALGAN/GAN; ALGAN/GAN HEMT; DC POWER CONSUMPTIONS; DESIGN CONSIDERATIONS; DESIGN VARIATIONS; FET SWITCHES; GAN; HIGH BREAKDOWN VOLTAGES; HIGH ELECTRON MOBILITIES; HIGH POWER; HIGH POWER HANDLING CAPABILITIES; HIGH POWERS; KU BANDS; LOW INSERTION LOSSES; PIN DIODE SWITCHES; POWER HANDLINGS; RF POWERS; SINGLE POLE DOUBLE THROWS; SPDT SWITCHES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 57349192228     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633058     Document Type: Conference Paper

References (5)

1. A. Darwish, K. Boutros, B. Luo, B. Huebschman, E. Viveiros, H Hung, "AlGaN/GaN Ka-Band 5-W MMIC Amplifier," IEEE Trans. Microwave Theory and Technique, vol. 54, pp. 4456-4463, Dec. 2006.
2. K. Boutros, B. Luo, Y. Ma, G. Nagy, J. Hacker, "5W GaN MMIC for Millimeter-Wave Applications," Compound Semiconductor Integrated Circuit Symposium, pp. 93-95, Nov. 2006.
3. Triquint Data Sheet, TGS4302, High Power Ka-Band SPDT Switch.
4. Triquint Data Sheet, TGS2306, High Power DC-18GHz SPDT FET Switch.
5. H. Ishida, Y. Hirose, T. Murata, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, T. Egawa, D. Ueda, " A High-power RF Switch IC Using AlGaN/GaN HFETs With Single -Stage Configuration," IEEE Trans. Electron Devices, vol. 52, pp. 1893-1899, Aug. 2005.