SiC and GaN wide bandgap technology commercial status

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Volumn , Issue , 2008, Pages

  Milligan, J W ^a   Sheppard, S ^a   Pribble, W ^a   Ward, A ^a   Wood, S ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND WIRELESS; COMMERCIAL PRODUCTS; COMMERCIAL SYSTEMS; DEVICE RELIABILITY; POWER-ADDED EFFICIENCY; ROBUST RELIABILITY; STANDARD DESIGN RULES; SWITCH-MODE AMPLIFIERS;

ENERGY GAP; GALLIUM NITRIDE; MESFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGY;

SILICON CARBIDE;

EID: 84887500700     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. J.W. Milligan, J. Henning, S.T. Allen, A. Ward, and J.W. Palmour "SiC MESFET and MMIC Technology Transition to Production", GaAs MANTECH Conference Digest of Papers, New Orleans, USA (2005).
2. Nathan O. Sokal, "Class-E RF Power Amplifiers", QEX, pp. 9-20 Jan/Feb 2001.