High power RF switch MMICs development in GaN-on-Si HFET technology

2008 IEEE Radio and Wireless Symposium, RWS

Volumn , Issue , 2008, Pages 855-858

  Yu, Mark ^a   Ward, Robert J ^a   Hegazi, Gamal M ^a  

^a ROCKWELL COLLINS   (United States)

Author keywords

GaN HFET; High power switches; MMIC switches; SP4T

Indexed keywords

COMPUTER NETWORKS; DC GENERATORS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SILICON;

GAN HFET; HIGH POWER SWITCHES; HIGH POWERS; MMIC SWITCHES; SP4T;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 50949126401     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RWS.2008.4463627     Document Type: Conference Paper

References (10)

1. Keiichi Numata, Yuji Takahashi, Tadashi Maeda, and Hikaru Hida, "A 2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application," IEEE Radio Frequency Integrated Circuits Symposium Digest, pp. 141-144, 2002,
2. Peter Katzin, Brian E. Bedard, Mitchell B. Shifrin, and Yalcin Ayasli, "High-speed, 100+ W RF switches using GaAs MMlCs," IEEE Trns. Microwave Theory and Techniques," vol. 40, pp. 1989-1996, Nov. 1992.
3. F. McGrath, C. Varmazis, C. Kermarrec, and R. Pratt, "Novel high performance SPDT power switches," IEEE MTT-S Digest, pp. 839-842, 1991
4. Val Kaper, Richard Thompson, Tom Prunty, and James R. Shealy, "Signal generation, control and frequency conversion AlGaN/GaN HEMT MMlCs," IEEE MTT-S Digest, pp. 1145-1148, 2004
5. O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga- face AlGaN/GaN heterostructures," J. Appl. Phys., vol. 85, pp. 3222-3233, 1999
6. Hidetoshi Ishida, Y. Hirose, T. Murata, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, T. Egawa, and D. Ueda, "A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration," IEEE Trans. Electron Devices, "vol. 52, pp. 1893-1899, August. 2005
7. Mayumi Hirose, Yoshiharu Takada, Masahiko Kuragushi, "A 1.9 GHz SPDT switch implemented with GaN HFETs featuring two different depth-recesses in i-AlGaN," IEEE CSIC Digest, pp. 163-166, 2004
8. Mark Yu, Robert J. Ward, Gamal M. Hegazi, Allen W. Hanson, and Kevin Linthicum, "The development of a high power SP4T RF switch in GaN HFET technology," IEEE Microwave and Wireless Components Letters, December, 2007.
9. J.W. Johnson, J. Gao, K. Lucht, J. Williamson, C. Strautin, J. Riddle, R. Therrien, P. Rajagopal, J.C. Roberts, A. Vescan, J.D. Brown, A. Hanson, S. Singhal, R. Borges, E.L. Piner, and K.J. Linthicum, "Material, process, and device development of GaN-based HFETs on silicon substrates," Electrochemical Society Proceedings, pp. 405, 2004.
10. S. Singhal, T. Li, A. Chaudhari, A.W. Hanson, R. Therrien, J.W. Johnson, W. Nagy, J. Marquart, P. Rajagopal, J.C. Roberts, E.L. Piner, I.C. Kizilyalli and K.J. Linthicum, "Reliability of large periphery GaN-on-Si HFETs," Microelectronics Reliability, Volume 46, Issue 8, pp. 1247-1253, August 2006.